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October 18, 2025Open Access

Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces

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Authors

DTDat Q. TranMKMinho KimONO. H. Nam

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Overview

Observational analysis of thermal conductivity and boundary resistance in GaN/AlN HEMTs, indicating significant impact of layer thickness on thermal performance.

Key Points

  • Thermal conductivity of the GaN channel shows significant thickness dependence at low temperatures, affecting performance.
  • Thermal boundary resistance at the AlN/4H-SiC interfaces reduces with temperature, indicating changes in phonon transport mechanisms.
  • Simulations reveal the critical importance of thermal boundary resistance in thin-channel devices for effective heat management.
  • Thicker GaN and AlN layers enhance heat dissipation capabilities in high-electron-mobility transistors.

Cite This Study

Tran et al. (2025) studied this question.

synapsesocial.com/papers/68f3793258f37cefb60d353bhttps://doi.org/10.48550/arxiv.2510.11936
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Also Consider

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