Parametric evaluation of CdTe, CIGS, HIT, and mSi solar modules as a function of temperature and irradiance variation

Photovoltaic (PV) module performance is strongly influenced by temperature and irradiance, and the general trends of efficiency reduction with increasing temperature and enhancement with higher irradiance are well established in the literature. In this work, we focus not on re-confirming these known qualitative behaviors, but on providing a high-accuracy quantitative characterization of cadmium telluride, copper indium gallium selenide, heterojunction with intrinsic thin layer, and monocrystalline silicon modules by means of the Self-Adaptive Differential Evolution algorithm applied to National Renewable Energy Laboratory current–voltage (I–V) datasets. The novelty of our contribution lies in extracting precise temperature and irradiance coefficients for the main single-diode model parameters (Iph, I0, n, Rs, Rsh), thus enabling reliable modeling and comparison of the four technologies under varying operating conditions. The results are summarized in a comprehensive parametric response matrix table, which provides benchmark coefficients for use in PV system modeling, performance prediction, and technology evaluation. These findings enhance the accuracy of PV simulations and provide a practical reference for researchers and engineers working on the design and optimization of photovoltaic systems.