Assessment of methods for extracting the five parameters of the single-diode model for semi-transparent photovoltaic modules

This is the authors' abstract. We don't add key points for this paper.

Cadmium telluride (CdTe) and amorphous silicon (a-Si) are semi-transparent photovoltaic (PV) technologies, which allow for simultaneous electricity generation and light transmission, making them suitable for agrivoltaic (APV) applications. The electrical characterisation of semi-transparent technologies under real outdoor conditions presents an interesting challenge that can be addressed using analytical and numerical methods for modelling the current-voltage (I-V) relationship. In this study, several methods for extracting the five parameters of the single-diode model (SDM) were used and compared to determine which is the most accurate for the electrical characterisation of semi-transparent a-Si and CdTe PV devices. Moreover, the equations expressing the dependence of the modelled parameters on the incoming irradiance were derived. The five parameters were determined by solving nonlinear equation systems derived from the SDM, using the slope of the I-V curve in open circuit and short circuit conditions, the cell temperature (T c ), the short circuit current (I sc ), the open circuit voltage (V oc ), the maximum power point voltage (V mpp ), and the maximum power point current (I mpp ), as input parameters. Although the results show an excellent match between the measured and modelled I-V curves in most cases, some methods yield parameter values that significantly deviate from those commonly reported in the literature, thus limiting their physical interpretability. Nevertheless, identifying the models that best predict the experimentally measured I-V curves is essential to ensure the reliability of energy forecasts, performance monitoring, and analysis of module behaviour under real and variable conditions, such as those typical of APV systems.