Advancements in Super-High Frequency Al(Sc)N BAW Resonators for 5G and Beyond

With the booming development of the 5G market in recent years, super-high frequency (SHF) resonators will play an increasingly critical role in 5G and future communication systems. Facing the growing market demand for miniaturized, high-bandwidth, and low insertion loss filters, the design of SHF resonators and filters with a high effective electromechanical coupling coefficient (K2eff) and quality factor, low insertion loss, high passband flatness, strong out-of-band rejection, and high power handling capacity has placed high demands on piezoelectric material preparation, process optimization, and resonator design. The polarity-inverted Al(Sc)N multilayer substrate has become one of the key solutions for SHF resonators. This review provides a comprehensive overview of the recent advances in SHF Al(Sc)N bulk acoustic wave (BAW) resonators. It systematically discusses the device design methodologies, structural configurations, and material synthesis techniques for high-quality Al(Sc)N thin films. Particular emphasis is placed on the underlying mechanisms and engineering strategies for polarity control in Al(Sc)N-based periodically poled multilayer structures. The progress in periodically poled piezoelectric film (P3F) BAW resonators is also examined, with special attention to their ability to significantly boost the operating frequency of BAW devices without reducing the thickness of the piezoelectric layer, while maintaining a high K2eff. Finally, the review outlines current challenges and future directions for achieving a higher quality factor (Q), improved frequency scalability, and greater integration compatibility in SHF acoustic devices, paving the way for next-generation radio frequency (RF) front-end technologies in 5G/6G and beyond.