In this study, we introduce the development of high-quality <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Sc0.3Al0.7N</tex> thin films (≤500 nm) for BAW resonators operating at 4 GHz and 6 GHz. Our findings reveal a substantial enhancement in the material coupling coefficient, exceeding 23%. This advancement enhances the potential of BAW technology in meeting the requirements of emerging wireless communication standards, particularly in terms of bandwidth.
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Qian et al. (2024) studied this question.
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