Laboratory tests show modified polishing materials enhance performance for CMP of silicon oxide layers.
A method for modifying the surface characteristics of material used for industrial production of polishing pads has been proposed, and the method has been tested in laboratory conditions. Comparative studies of polishing materials from different manufacturers with similar characteristics were carried out. The possibility of using modified materials for the process of chemical-mechanical polishing (CMP) of single-crystal wafers with a layer of silicon oxide is shown.
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Terashkevich et al. (2022) studied this question.
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