Fabrication and Tailoring the Morphological and Electrical Features of Silicon Nitride-Silicon Dioxide/Polymethyl Methacrylate Hybrid Nanocomposites for Nanoelectronics Fields

The goal of this research is to create PMMA and SiO2-Si3N4 nanoparticles doped PMMA films with enhanced structural and electrical properties to employ in various quantum electronics fields. The casting process was used to create the (PMMA-SiO2-Si3N4) nanocomposite films. In the development of nanocomposite materials, the hybrid nanocomposite films with 2.3%, 4.6% and 6.9% contents of nanoparticles were prepared. Using an optical microscope (OM), the morphology of the nanocomposites was examined. At room temperature, the electrical characteristics of (PMMA-SiO2-Si3N4) nanocomposites were investigated. The results revealed that the dielectric constant and dielectric loss of (PMMA-SiO2-Si3N4) nanocomposites reduced as the frequency of the applied electric field increased. The electrical conductivity of alternating current rises with rising frequency. With increasing concentrations of SiO2-Si3N4 nanoparticles, the dielectric constant, dielectric loss, and AC electrical conductivity of (PMMA-SiO2-Si3N4) nanocomposites were enhanced. When the SiO2-Si3N4 NPs content reached 6.9% at 100Hz, the dielectric constant increased from 3.86 to 4.76 while the dielectric loss increased from 0.19 to 0.29. Finally, the obtained results demonstrated that the (PMMA-SiO2-Si3N4) nanocomposites have elevated values of dielectric constant compared with dielectric loss, which makes them suitable for a variety of quantum electronics applications.