DC/AC/RF Characteristic Fluctuation of N-Type Bulk FinFETs Induced by Random Interface Traps

Three-dimensional bulk fin-type field-effect transistors (FinFETs) have been the dominant devices since the sub-22 nm technology node. Electrical characteristics of scaled devices suffer from different process variation effects. Owing to the trapping and de-trapping of charge carriers, random interface traps (RITs) degrade device characteristics, and, to study this effect, this work investigates the impact of RITs on the DC/AC/RF characteristic fluctuations of FinFETs. Under high gate bias, the device screening effect suppresses large fluctuations induced by RITs. In relation to different densities of interface traps (Dit), fluctuations of short-channel effects, including potential barriers and current densities, are analyzed. Bulk FinFETs exhibit entirely different variability, despite having the same number of RITs. Potential barriers are significantly altered when devices with RITs are located near the source end. An analysis and a discussion of RIT-fluctuated gate capacitances, transconductances, cut-off, and 3-dB frequencies are provided. Under high Dit conditions, we observe ~146% variation in off-state current, ~26% in threshold voltage, and large fluctuations of ~107% and ~131% in gain and cut-off frequency, respectively. The effects of the random position of RITs on both AC and RF characteristic fluctuations are also discussed and designed in three different scenarios. Across all densities of interface traps, the device with RITs near the drain end exhibits relatively minimal fluctuations in gate capacitance, voltage gain, cut-off, and 3-dB frequencies.