Impact of Interface Trap Densities on Mg2Si-Based Electrostatically Doped Tunnel FET

Tunnel Field-Effect Transistors (TFETs) offer promising subthreshold characteristics and low leakage currents for ultra-low-power applications, yet suffer from inherently low ON-state current (ION) and susceptibility to process-induced reliability issues. This work proposes a magnesium silicide-based electrostatically doped TFET (Mg2Si-ED-TFET), utilizing the narrow bandgap and high carrier mobility of Mg2Si to enhance band-to-band tunneling probability. A rigorous reliability analysis is performed by introducing interface trap densities (ITDs) in the range of 1011–1012 cm−2 at the Si/SiO2 interface, with both donor- and acceptor-like charge polarities. The traps induce shifts in flat-band voltage and alter the electric field distribution, affecting the tunneling junction and subthreshold swing. Simulation results demonstrate that the Mg2Si-ED-TFET sustains a stable ION/IOFF ratio and exhibits minimal threshold voltage shift under trap influence, outperforming conventional ED-TFET counterparts. These findings highlight the device’s robustness against interface-induced degradation, confirming its suitability for next-generation, reliable, and energy-efficient nanoelectronic circuits.