Nanoscale imaging shows reduced forward bias and improved electrical efficiencies in nitride LEDs, suggesting higher internal quantum efficiency near V-pits.
Record wall-plug efficiencies in long-wavelength, nitride light-emitting diodes (LEDs) have recently been achieved in devices containing high V-pit densities. Numerical modeling suggests this may be due to improved electrical efficiencies (EE). In order to test this proposition, a novel scanning tunneling luminescence microscope (STLM) is used to map the local optoelectronic properties of commercial, green-emitting LED heterostructures around V-pits with nanoscale spatial resolution. Using the STLM tip as the hole injector, injection at the lips of V-pits is found to be drastically different from injection on the heterostructure's c-plane. A ≈ 3-fold improvement in internal quantum efficiency near V-pits is observed at low injection, and at higher injection a ≈ 1.2 V reduction in the forward bias unambiguously confirms the EE hypothesis for hole injection.
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Fornos et al. (2025) studied this question.
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