Effect of V‐Pits Coverage Optoelectronic Characteristics in Green GaN‐Based Mini‐Light‐Emitting Diodes Grown by MOCVD

V‐pits have been intensively studied for their role in light‐emitting diodes (LEDs). The coverage of V‐pits in InGaN/GaN multi‐quantum wells (MQWs) is critical for suppressing leakage path through electron blocking layer (EBL). In this study, we have investigated the coverage of V‐pits in green mini‐LEDs modulated via growth parameters optimization and systematically analyzed the characteristics of the photoelectric properties associated with V‐pits coverage on device. Elevated temperatures and pressures result in enhanced adatoms migration, which can achieve a coverage up to 98.8% of V‐pits, improving the crystal quality due to stable surface. Electrical characterization reveals that although high‐coverage devices exhibit suppressed leakage current, their peak external quantum efficiency (EQE) decreases, more seriously spectral blue shift and operating voltage increase due to compromised hole transport uniformity. Intriguingly, intermediate‐coverage samples demonstrate superior breakdown voltage characteristics. Current–voltage curve analysis shows the ideality factor increases from 1.8 to 2.5 with improved coverage, indicating aggravated Shockley–Read–Hall (SRH) recombination with covered V‐pits.