Corrosion inhibition threshold effect of 1,2,4-triazole in alkaline chemical mechanical polishing of copper: Investigations using synchrotron radiation microinfrared

Abstract The threshold effect of 1,2,4-triazole (TAZ) on copper corrosion inhibition under alkaline chemical mechanical polishing (CMP) process is investigated using the synchrotron radiation micro-infrared spectroscopy. The study shows that 15 mM TAZ provides the best corrosion inhibition for copper in CMP slurry. The integrity of the surface film decreases significantly at concentrations above the threshold level. This is mainly due to the agglomeration of Cu-TAZ complexes on copper surface. In addition, the corrosion inhibition mechanism of TAZ for copper in alkaline CMP slurry is discussed in depth.