Electrodeposition of aluminum-silicon films in 1-ethyl-3-methylimidazolium chloride: aluminum chloride (1:1.5 molar ratio) was studied in the presence of different silicon halides. The silicon content in the deposited films was investigated as a function of the type and the concentration of various Si precursors. Using pulse plating technique, Al-Si films with Si content between 2 - 12.9 at. % could be obtained on copper substrates at room temperature.
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Venkatesh et al. (2024) studied this question.
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