Molecular layer deposition of hybrid silphenylene-based dielectric film

Molecular layer deposition (MLD) offers molecular level control in deposition of organic and hybrid thin films. This article describes a new type of inorganic–organic silicon-based MLD process where Aluminium chloride (AlCl 3 ) and 1,4-bis(triethoxysilyl)benzene (BTEB) were used as precursors. Hybrid films were deposited at a temperature range of 300 to 500 °C and high growth per cycle (GPC) up to 1.94 Å was obtained. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to analyze the appearance of the film surface. The hybrid film was amorphous in low-magnification FESEM images but some particulates appeared in high-magnification FESEM images (200 k). Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), Time-of-flight elastic recoil detection analysis (ToF-ERDA), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the structure and composition of the hybrid film. The ratio of Al/Si in the hybrid film was 0.8. The storage environment of the films affected their capacitance, dielectric constant, leakage performance, and breakdown voltage. A film stored in a high vacuum (10 –6 mbar) environment had low leakage current density (< 10 –6 A × cm −2 at an applied voltage of 28 V) and a dielectric constant of 4.94, which was much smaller than after storing in a humid ambient environment.