Synthesis of SiCNO:H Dielectric Layers by Plasma-Enhanced Chemical Vapor Deposition Using a Novel Organosilicon Precursor

Hydrogenated silicon oxycarbonitride (SiCNO:H) dielectric layers have been synthesized by the plasma-enhanced chemical vapor deposition (PECVD). 4-(Trimethylsilyl)morpholine, which contains the C–O–C fragment, was used as a single-source precursor. The effect of deposition temperature on the composition, chemical bonding structure, surface morphology, and dielectric properties of the films has been shown. The presence of Si–C, Si–N, C–O, and Si–CH3 bonds in the films and the formation of new Si–CH2–Si and Si–O moieties during the thermally induced crosslinking of the polymer have been confirmed by FTIR spectroscopy and X-ray photoelectron spectroscopy. The films are a promising dielectric material characterized by a permittivity of 3.0–3.4 and a breakdown voltage of up to 5 × 106 V/cm.