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Synthesize carbon-doped oxide (SiCOH) films with ultralow dielectric constants using plasma-enhanced chemical vapor deposition and evaluate their feasibility for advanced integrated circuit interconnects.

August 6, 2001Applied Physics Letters

Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition

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Synthesize carbon-doped oxide (SiCOH) films with ultralow dielectric constants using plasma-enhanced chemical vapor deposition and evaluate their feasibility for advanced integrated circuit interconnects.
Deposited SiCOH dielectric films using plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors and organic materials.
Characterized film composition and structure via Rutherford backscattering, forward recoil elastic scattering, Fourier transform infrared spectroscopy, refractive index, and step-height measurements.
Fabricated metal–insulator–silicon structures to measure the electrical properties and determine dielectric constant values.
Reduced dielectric constants of the SiCOH films to values below 2.1 through the optimization of precursor selection and deposition conditions.
Demonstrated the extendibility of PECVD carbon-doped oxides as insulating layers for future generations of very large scale integrated chips.

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Implication

Experimental study demonstrates dielectric constants below 2.1 in carbon-doped oxide films, indicating their viability as interconnect dielectrics for integrated circuits.

Cite This Study

Grill et al. (2001) studied this question.

synapsesocial.com/papers/6a89339e1fb56efa37d43753 https://doi.org/10.1063/1.1392976

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Implication

Experimental study demonstrates dielectric constants below 2.1 in carbon-doped oxide films, indicating their viability as interconnect dielectrics for integrated circuits.

Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition

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Discussion

Implication

Cite This Study

Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition

Key Points

Discussion

Implication

Cite This Study

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