Demonstration of VGAA-TFETs using InAs/Si Heterojunction on SOI substrate

Tunnel field-effect transistors (TFETs) are expected to be used as a next-generation low-voltage switching device. The TFETs can lower the subthreshold slope (SS) below the physical limit (SS = 60 mV/dec at room temperature) in conventional MOSFETs. Here we demonstrated InAs nanowire (NW)/Si heterojunction vertical gate-all-around (VGAA) TFETs on silicon-on-insulator (SOI) (111) substrates toward vertical integrated circuit applications. The vertical InAs NW channels were grown by selective-area growth on thin SOI(111) substrates.