Copper indium gallium disulfide (CuInGaSe 2 ) or (CIGS) based solar cells are emerging solar cell structures that have attracted significant interest in recent years. In this research, a SCAPS-1D simulator was used to investigate the performance of the proposed CIGS based solar cell under the effect of a copper (I) thiocyanate (CuSCN) hole transport layer (HTL). Different photovoltaic parameters, such as the efficiency, short circuit current density (J sc ) and open-circuit voltage (V oc ), are observed with respect to the doping concentration, temperature, and thickness. A comparative study is presented between a hole transport layer (HTL) and without an HTL. The simulation results demonstrate that the HTL has a significant impact and plays a major role in improving the performance of the proposed CIGS solar cell structure compared to that without the HTL. This research outlines a structured guide for both the manufacturing process and achievement of cost-effective, highly efficient solar cells.
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Zaidi et al. (2024) studied this question.
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