In this research, we present an environmentally friendly and high‐efficiency thin‐film solar cell using Cu(In,Ga)Se 2 (CIGS) that was modeled using SCAPS‐1D software. The goal is to produce a nontoxic and sustainable photovoltaic device with improved performance. The optimal structure of the device FTO/WS 2 /CIGS/Cu 2 O/Au consists of a CIGS absorber, WS 2 buffer, FTO electron transport layer (ETL), and Cu 2 O hole transport layer (HTL). The device performance is systematically analyzed with a focus on design parameters including absorber thickness, buffer thickness, defect density, operating temperature, contact work function, and doping concentration. The optimized structure that consists of a 1.0‐ μ m CIGS absorber, 0.05‐ μ m WS 2 buffer, 0.05‐ μ m FTO ETL, and 0.5‐ μ m Cu 2 O HTL resulted in a simulated efficiency of 32.88%, with an open‐circuit voltage (Voc) of 0.9184 V, short‐circuit current density (Jsc) of 42.98 mA/cm 2 , and fill factor (FF) of 83.28%. The addition of WS 2 enhances the charge carrier transport and decreases the interface recombination because of band alignment and high electron mobility. These findings indicate the potential of using WS 2 as a CIGS‐based heterostructure for new generations of environmentally friendly thin‐film solar cells.
Siddiqui et al. (Thu,) studied this question.