A 31% Efficient CIGS-Based Solar Cell Using Spiro Material as a Buffer Layer: Numerical Simulation

This study investigates the potential boost of (Cu(In,Ga)Se2) based solar cells through numerical simulations using SCAPS-1D software to optimize their performance. Various parameters were analyzed, including the thickness, acceptor concentration, and band gap of the CIGSe active layer, as well as the donor concentration and thickness of the ZrS2 buffer layer. The impact of operating temperature was also considered. The optimized output characteristics of the proposed cell design include a VOC of 1.13V, JSC of 32.61mA/cm², FF of 89.12, and a PCE of 32.91. These findings can aid in advancing the development of high-efficiency CIGSe-based thin-film solar cells.