Observation of dielectric anomaly at magnetic transition temperature in NdMn1xZnxO3/SNTO (x = 0.00, 0.05, 0.10) films

We report our observation of dielectric anomaly from temperature–dependent dielectric study near the antiferromagnetic transition (T N ) in pure and Zn–doped NdMnO 3 /SNTO (SrNb 0.002 Ti 0.998 O 3 ) epitaxial films. Structural and microstructural studies showed the presence of compressive strain along the a– axis and changes in grain size due to Zn–substitution. The variation in the elemental concentration of Zn was confirmed by RBS measurements led to amend Mn–Mn exchange interactions in doped films. Alteration in T N due to Zn–doping, obtained from D.C. magnetization is consistent with the dielectric anomaly temperatures, indicating the presence of magnetoelectric effect in pure and Zn–doped NdMnO 3 /SNTO system.