Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination

In this work, 4H-SiC p-i-n diodes with excellent single-pulse avalanche energy density (EAS) with positively beveled mesa termination have been demonstrated. The fabrication of this junction termination extension (JTE) obviates ion implantation and requires only etching process. With its uniform electric field and temperature distribution, the fabricated 4H-SiC p-i-n diodes show breakdown voltage (BV) of 886V (98.4% of the parallel-plane limit) and the inductive avalanche energy density of ~10.4J/cm 2 @1mH. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted. The results confirm that this structure exhibits great capability potential in power applications.