Edge Termination Optimization of a 6.5 kV SiC PiN Diode with a P-type Epitaxial Layer

A breakdown voltage of 9.2 kV with an improved JTE dose window was achieved in a 6.5 kV SiC PiN diode with a p-type epitaxial layer using an optimized edge termination. Since the etching profile and charge balance critically affect the electric field distribution in high voltage structures, the effects of single and double etched structures were first investigated, followed by the optimization of SZ-JTE and RA-JTE. To further improve the edge termination characteristics, a Hybrid-JTE incorporating MFZ-JTE was developed based on the optimized RA-JTE structure. The optimized Hybrid-JTE achieved a breakdown voltage of 9.2 kV and exhibited enhanced tolerance to JTE dose variation.