A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices

In this work, a novel tapered doping tail modulated junction termination extension (TDTM-JTE) technique without extra process steps or masks is proposed, and successfully experimentally demonstrated. With the application of the proposed TDTM-JTE technique to 4H-SiC PiN diodes with a 30-μm-thick/3×10 15 cm -3 doped epi-layer, it was experimentally demonstrated that the TDTM-JTE provides a nearly ideal breakdown voltage (~99% of the ideal parallel plane breakdown voltage) with a stable avalanche blocking characteristic. Results show that the TDTM-JTE technology can significantly improve blocking characteristic, reduce process complexity and insensitivity to process parameter variations, and is a potential candidate termination technique for high voltage SiC power devices.