1.4 3 kV 4H-SiC Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm²)

In this letter, 4H-SiC high-voltage lateral junction barrier Schottky (LJBS) diodes are optimized by simulation and demonstrated experimentally. With the utilization of the DOUBLE-RESURFs structure, the devices have a more balanced electric field distribution, thereby enhancing the blocking ability. For three design values of the drift region length LD (10μm, 12μm and 15μm), the devices exhibit the maximum breakdown voltages ( BVMAX ) ranging from 1210 V to 1650 V. Moreover, Baliga's figure of merit ( BFOM ) of 390 MW/cm 2 with a specific ON-resistance ( RON,sp ) of 5.25 mω·cm 2 has been achieved for the 1430 V device, which is the best performance compared to the reported SiC lateral power devices. Such an improvement brings enormous potential to the development of SiC monolithic power integrated circuits.