SiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure Control

We have investigated carbon behavior resulting from pressure control in furnace thermal oxidation process and evaluated the effect on gate oxide quality resulting from this pressure control. In order to investigate the potential reduction of carbon defects by reducing CO and CO 2 , an analysis of oxidized SiC wafers was conducted. To evaluate the effect of pressure control related carbon component change during thermal oxidation, Q BD characteristic was evaluated in SiC MOS Capacitance. The analysis results revealed on observable decrease in carbon at the SiO 2 /SiC interface and the SiO 2 layer. The Q BD results shown that improved at lower pressure better than those obtained in the general pressure.