The Investigation of Effective Thermal Oxidation to SiC MOSFET Gate Oxide Quality Improvement

This study investigates the effects of lower pressure and chlorine gas added oxidation on the GOI during the SiC MOSFET GOX process. For structural comparison, analyses were conducted using Dynamic SIMS and TOF-SIMS. Notable differences in the uniformity of silicon concentration within the oxide layer were observed under various GOX conditions. To evaluate the impact of these differences on the characteristics of SiC MOSFETs, Q BD results were compared. To enhance the reliability of the findings, DOE evaluations of GOX were performed across multiple products. The experimental results indicated that the SiC MOSFET wafers subjected to chlorine oxidation exhibited improved Q BD performance compared to other conditions.