Based on the initial process flow conditions, this paper delves into an extensive exploration of the impact of key gate oxide process parameters, such as variations in Hydrogen content during oxidation and pressure during nitrogention, on the SiON layer thickness and nitrogen concentration. Subsequently, we investigate the influence of variations in these process parameters and the annealing method on the electrical properties of CMOS devices. This research is crucial for advancing the optimization of the gate oxide process to enhance the electrical performance of devices.
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Hu et al. (2024) studied this question.
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