Buffer Layer Dependence of Defectivity in 200mm 4H-SiC Homoepitaxy

The effect of increasing Buffer Layer (BL) thickness on crystal defectivity has been investigated in 4° off-axis 4H-SiC homoepitaxy on 200mm substrates coming from different suppliers. The results, based on optical microscopy and scatter light methods, show a slight increase in morphological defects in the case of a thicker BL with respect to the standard thickness for both suppliers.