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Investigate the depth-dependent distribution and thermal recovery of defects and lattice strain induced by H+ implantation in 4H-SiC during layer transfer.

May 1, 2025Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Distribution and evolution of defects and lattice strain induced by H+ implantation in 4H-SiC for layer transfer processes

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Investigate the depth-dependent distribution and thermal recovery of defects and lattice strain induced by H+ implantation in 4H-SiC during layer transfer.
Characterized H+-implanted 4H-SiC across penetration and accumulation depths using deep ultraviolet Raman spectroscopy and X-ray diffraction combined with Ar+ etching.
Assessed longitudinal lattice stress, crystal cleavage behavior, and defect annealing efficiency at varying depths.
Elevated defect densities and significant lattice stress extended across both the H+ accumulation zone and the broader H+ penetration region.
Post-implantation annealing effectively repaired damage near the surface, but substantial unrecovered damage remained concentrated near the deeper H+ accumulation boundary.

Authors

YSYao ShuaiUniversity of Electronic Science and Technology of China DZDailei ZhuUniversity of Electronic Science and Technology of China WLWenbo LuoUniversity of Electronic Science and Technology of China

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Implication

Experimental study demonstrates incomplete subsurface defect recovery following annealing in hydrogen-implanted 4H-SiC, highlighting the need for targeted deep-layer repair strategies.

Cite This Study

Shuai et al. (2025) studied this question.

synapsesocial.com/papers/6a9dab5c30bdd6b10046f22b https://doi.org/10.1116/6.0004436

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Implication

Experimental study demonstrates incomplete subsurface defect recovery following annealing in hydrogen-implanted 4H-SiC, highlighting the need for targeted deep-layer repair strategies.

Distribution and evolution of defects and lattice strain induced by H+ implantation in 4H-SiC for layer transfer processes

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Discussion

Implication

Cite This Study

Distribution and evolution of defects and lattice strain induced by H+ implantation in 4H-SiC for layer transfer processes

Key Points

Discussion

Implication

Cite This Study

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