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September 10, 2025Open Access

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation

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Authors

ZCZe Yu ChenStony Brook UniversityQCQian Yu ChengStony Brook UniversitySHShan Shan HuStony Brook University

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Implication

Analysis reveals reduced lattice damage with silicon energy-filtered ion implantation, indicating optimal doping and annealing conditions for 4H-SiC wafers.

Key Points

  • Implanted Al ions into 4H-SiC wafers reduce lattice damage through dynamic annealing, especially at higher temperatures.
  • Highest implantation temperatures resulted in the lowest residual strains post-annealing at 1700 °C.
  • Using a silicon energy-filter for Al ion implantation further diminishes lattice strain compared to unfiltered implantation.
  • The study informs the optimization of doping and annealing processes essential for superjunction device fabrication.

Cite This Study

Chen et al. (2025) studied this question.

synapsesocial.com/papers/68c192459b7b07f3a061656dhttps://doi.org/10.4028/p-99wz0t
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Also Consider

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  1. 1Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures2024 · 1 citations
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  4. 4An Investigation of Electric Field and Breakdown Voltage Models for a Deep Trench Superjunction SiC VDMOS2019 · 15 citations
  5. 5Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode2022 · 8 citations