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August 22, 2024Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forumOpen Access

Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures

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Authors

ZCZe Yu ChenStony Brook UniversityYLYafei LiuXi'an University of Architecture and TechnologyQCQian Yu ChengStony Brook University

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Chen et al. (2024) studied this question.

synapsesocial.com/papers/68e5b4f8b6db64358754e1ebhttps://doi.org/10.4028/p-hody82
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Also Consider

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  1. 1Dynamic annealing in ion implanted SiC: Flux versus temperature dependence2003 · 48 citations
  2. 2Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode2022 · 8 citations
  3. 3Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms2022 · 6 citations