Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC

N atoms were doped into SiN x /4H-SiC substrates by KrF laser irradiation while the substrates were heated. The diffusion depth of nitrogen increased above the solubility limit when the sample heated to 600°C was irradiated by the laser compared to the sample at room temperature. In addition, a clear 4H-SiC pattern was observed in the cross-sectional TEM diffraction image, thereby suggesting that sufficient crystal recovery was achieved even under melt-solidification conditions owing to the effect of substrate heating.