Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices

Investigation of the doped areas in 4H-SiC power devices has been done by non-destructive characterization methods. It consists of local surface potential measurements by Kelvin Probe Force Microscopy (KPFM) coupled with scanning electron microscopy (SEM) and µ-Raman spectroscopy. Near-field mappings of the devices’ surface have been realized, allowing us to discern the differently doped areas.