Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning

Ternary content-addressable memory (TCAM) is promising for data-intensive artificial intelligence applications due to its large-scale parallel in-memory computing capabilities. However, it is still challenging to build a reliable TCAM cell from a single circuit component. Here, we demonstrate a single transistor TCAM based on a floating-gate two-dimensional (2D) ambipolar MoTe