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March 1, 2026Advanced Intelligent SystemsOpen Access

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

Jin Wook Lee Changha Kim Geun Tae Park Seung Hun Baek Myeong Su Shin Woo Young Choi

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Key Points

The aim is to develop a ternary content-addressable memory structure for efficient data processing in AI applications.
Designed a 3D TCAM array using one capacitor and one nanoelectromechanical memory switch.
Employed charge-domain techniques for in-memory computing.
Integrated the memory structure within CMOS metal layers.
Successfully demonstrated a compact memory design for ternary content addressing.
Highlighted advantages for applications in one-shot learning and data-intensive tasks.
Showed that the memory structure enables efficient data retrieval and processing speeds.

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Implication

Nanoelectromechanical TCAM array demonstrates in-memory computing benefits for AI applications, suggesting improved data processing.

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Cite This Study

Lee et al. (2026) studied this question.

synapsesocial.com/papers/69be35946e48c4981c673e51 https://doi.org/10.1002/aisy.70241

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