1T-TCAM with binary storage enabling ternary matching via bias-controlled wildcards using a feedback field-effect transistor

In this study, we propose a reconfigurable one-transistor ternary content-addressable memory (1T-TCAM) cell that employs binary data storage while enabling ternary matching through bias-controlled wildcard operation based on a triple-gated feedback field-effect transistor (FBFET) using a nitride charge-trapping layer. The energy band diagram, electrical characteristics, and TCAM operations, including cell-level functionality, sensing margin, search time, and 8-bit array performance, are systematically analyzed using a commercial TCAD simulator. The proposed 1T-TCAM cell supports three distinct search operations -Search '0', Search '1', and Don't Care - by modulating the potential barrier in the p-i-n silicon channel through gate voltage control, while retaining binary data storage. It exhibits high complementary metal-oxide-semiconductor (CMOS) process compatibility and achieves a short search time below 2 ns with a high on-current of ~10 µA, resulting in a sensing margin exceeding 1010 and demonstrating superior integration density and high-speed search performance.