(Digital Presentation) Doped ZnO Layer (ZnO-Ga) Window Layer Fabrication By Electrodeposition

As an n-type semiconductor, zinc oxide (ZnO) is a conducting oxide for CIGS thin solid film 1 ZnO also possesses excellent stability, exceptional transparency, and high electron mobility, among other beneficial qualities 2-4 . As in previous work for producing CIGS solar devices, this study presents the electrodeposited ZnO layer doped with gallium as a top layer. The substrate is undoped Zinc Oxide, and the electrochemical process was conducted at 72 °C. The electrolyte consists of Zn(NO 3 ) 2 , GaCl 3, and LiCl as a supporting electrolyte. This work is comparing both DC and pulsing electroplating to optimize the process parameters. Complete electrodeposited devices with quantum efficiencies greater than 0.63 and efficiencies ranging from 3.2 to 6.3% were formed and evaluated. This work provides the electrochemical behavior and agitation effects of the deposit chemical composition. The deposit adhesion to the substrate was tested by applying the peeling test. For each of the three doped ZnO layers, sample polarization curves at 400 rpm electrode rotation speed is given (figure 1). With the use of XRD and the energy-dispersive X-ray spectroscopy technique (EDS), the final composition, oxide concentrations, crystallography, and oxide effects on the deposit were ascertained (figure 2). To measure the thickness of the deposit, a profilometer was employed. References [1] Saeed, M. Peña,.G. Nanomaterials 2021, 11 , 911. [2] Rousset, J. Saucedo, E. Lincot, D. Chemistry of Materials 21 (2009) 534-978. [3] Machado. G, Guerra. D, Leinen. J, Ramos. R, Marotti. A, Dalchiele, Thin Solid Films 490 (2005) 124 – 131. [4] Chikoidze, E. Nolan, M. Modreanu, M. Sallet, V. Galtier, P. Thin Solid Films 518 (2008) 8146.