The study of the crystalline silicon solar cell (n+/p/p+) with vertical multi junction connected in series through the resolution of the diffusion equation (2D) in dynamic regime relative to the density of minority carriers in the (p) base, provided with the boundary conditions associated with the recombination velocity at the junction and on the rear side, leads to the electrical characteristics, current-voltage, power-voltage delivered and Fill factor.This work shows and analyzes on these quantities, the effects of the frequency of modulation of the incident polychromatic light, of the recombination velocity of the minority carriers on the back side and the junction, the thickness of the base and its depth of the solar cell.
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