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The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the ASi-Sii-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the BSi-Sii-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the BSi-Sii-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments.
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Lauer et al. (2024) studied this question.
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