Optimizing microwave dielectric properties of low‐temperature sintered Sr/Zn‐substituted BaMg₂V₂O₈ by mixing with TiO₂

Ba 1 − x Sr x Mg 2 − y Zn y V 2 O 8 compounds, abbreviated as BSMZVO@ xy ( x = 0.0–0.2 and y = 0.02), were synthesized with tetragonal structures. The microstructure, molecular structure, and polarization mechanism were investigated using X‐ray diffraction, electronic microscopy, Raman spectroscopy, and vector network analyzer. The sintering temperatures (<900°C) and microwave dielectric properties of BSMZVO are significantly impacted by (Sr/Zn) 2+ substitution and TiO 2 mixing. The BSMZVO@ xy ( x = 0.15 and y = 0.02) exhibited encouraging ε r (12.4–12.7), Q × f (40 054–40 973 GHz), and temperature coefficient of resonance frequency ( τ f ∼ −5.2 to 0.0 ppm/°C) after sintering at 860°C/4 h and 800°C/4 h. For the first time, TiO 2 was added to enhance the density and Q × f value without degrading τ f . The 0.25 wt.% TiO 2 resulted in optimum ε r of 13.4, Q × f of 43 636 GHz, and τ f of +1.8 ppm/°C after sintering at 760°C/4 h. The improved quality factor ( Q × f ) is linked to the Raman A 1g mode and relative density.