This study investigates the luminous efficiency on 385nm AlInGaN-based Micro UltravioletLight-emitting Diodes (uUV-LEDs) with Photonic Crystals (PhCs). The PhC lattice constant of 385 nm, and hole depth of 250 nm on the pGaN layer increase the output power extraction efficiency by 1.74timescompared with pGaN non-PhCuUV-LED.
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Muramoto et al. (2024) studied this question.
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