Wedge-type engineered analog SiOₓ/Cu/SiOₓ-Memristive Devices for Neuromorphic Applications

This study presents a comprehensive examination of the development of TiN/SiOₓ/Cu/SiOₓ/TiN memristive devices, engineered for neuromorphic applications using a wedge-type deposition technique and Monte Carlo simulations. Identifying critical parameters for the desired device characteristics can be challenging with conventional trial-and-error approaches, which often obscure the effects of varying layer compositions. By employing an off-center thermal evaporation method, we created a thickness gradient of SiOₓ and Cu on a 4-inch wafer, facilitating detailed resistance map analysis through semiautomatic measurements. This allows to investigate in detail the influence of layer composition and thickness on single wafers, thus keeping every other process condition constant. Combining experimental data with simulations provides a precise understanding of the layer thickness distribution and its impact on device performance. Optimizing the SiOₓ layers to be below 12.5 nm, coupled with a discontinuous Cu layer with a nominal thickness lower than 0.6 nm, exhibits analog switching properties with an Rₒn/Rₒff ratio of $>$100, suitable for neuromorphic applications, whereas R × A analysis shows no clear signs of filamentary switching. Our findings highlight the significant role of carefully choosing the SiOₓ and Cu thickness in determining the switching behavior and provide insights that could lead to the more systematic development of high-performance analog switching components for bio-inspired computing systems.