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June 18, 2024Journal of Computational ElectronicsOpen Access

Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium

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EIE. IgumborUniversity of Johannesburg

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E. Igumbor (2024) studied this question.

synapsesocial.com/papers/68e643e3b6db6435875d55c5https://doi.org/10.1007/s10825-024-02179-0
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Also Consider

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  1. 1Donor-vacancy complexes in Ge: Cluster and supercell calculations2006 · 64 citations
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  3. 3Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations2009 · 1,605 citations
  4. 4Conductivity and Hall Effect in the Intrinsic Range of Germanium1954 · 302 citations