Design and preparation of L-band multilayer low-group delay filter based on inner sputtering

Article propose a design for an L-band multi-layer MEMS cross-finger filter based on pore interior wall sputtering. Article analyze the structural parameters, such as resonator thickness and TSV structure, using HFSS simulation software. Findings indicate that the filter has a central frequency of 1.5 GHz, a bandwidth of 140 MHz, a band loss of less than 1 dB, return loss is greater than 25 dB, and a band group delay of less than 800 ps. Furthermore, Article conduct process design optimization and finished product testing for the filter, including optimizing the TSV process for the hole inner wall sputtering process. These results demonstrate the filter's broad application prospects.