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June 10, 2024Applied Physics Letters

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

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Authors

BSBejoy SikderTHToiyob HossainQXQingyun Xie

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Sikder et al. (2024) studied this question.

synapsesocial.com/papers/68e6567bb6db6435875e59f6https://doi.org/10.1063/5.0203344
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Also Consider

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  1. 1Impact of p-GaN thickness on the transport properties of two-dimensional hole gases in a GaN/AlGaN/GaN heterostructure2025
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  4. 4Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs2022 · 45 citations
  5. 5Electrical and optical characterisation in AlGaN/GaN/Si HEMTs2026