Design on overvoltage protection circuit for automotive power switching MOSFET

The power MOSFET is a crucial component in power electronics technology, playing a key role in achieving efficient electricity transformation, power regulation and processing, as well as energy allocation. It is commonly employed as a switch in vehicle power applications. Power devices are particularly sensitive to fluctuations in supply voltage, especially when operating within a wide input voltage range and integrated into high-voltage power modules. Exceeding the rated upper limit of the input voltage can result in localized temperature rise, excessive power dissipation, and potentially lead to breakdown damage. This paper presents a novel over-voltage protection circuit for power semiconductor devices, utilizing multi-mode protection trigger technology. The proposed circuit is specifically designed for newly-developed power integrated circuits, offering improved anti-noise capability, faster response and recovery speed, and high hysteresis reliability to mitigate frequent triggering. Through simulation, the circuit is validated to ensure stable operation of the power MOSFET below the safety.