Design and performance optimization of broadband millimeter-wave power amplifier based on 45nm SOI process

In response to the growing demand for high-performance millimeter-wave power amplifiers driven by advancements in millimeter-wave communication and radar technology, this study presents the design and performance evaluation of a wideband power amplifier with a central frequency of 34GHz, based on a 45nm SOI process. The design employs a two-stage differential amplifier structure, neutralization capacitor technique, and load-pull method, enhancing circuit gain and stability. An asymmetric magnetic coupling technique and transformer broadband matching are integrated to counterbalance the high-frequency gain of the power amplifier, yielding a level in-band gain. Simulation results indicate a power gain of 23.2dB at 34GHz, a saturated output power of 16.3dBm, an output power at the 1dB compression point of 13.1dBm, and a peak power-added efficiency of 44%. The amplifier exhibits a 3dB bandwidth from 31.5 to 40.1 GHz, demonstrating superior performance. This work provides a valuable reference for future millimeter-wave RF integrated circuit research.