Ballistic Transport in Planar 2-D ZnXNTEXPRESERVE0 (X $=$ Si, Ge) Transistors With Ultrahigh On-State Current

As traditional field-effect transistors (FETs) based on silicon scaling to approach physical limits, it is of great importance to explore novel solutions to address this issue. Two-dimensional semiconductors are recognized as a promising prospect for future high-performance (HP) FETs. Given that 2-D ZnXN <tex-math notation="LaTeX">₂</tex-math> (X <tex-math notation="LaTeX">$=$</tex-math> Si, Ge) possesses environmental friendliness, high stability, graphene-like structure, and single-atomic-layer thickness, a comprehensive investigation on their electronic and transport properties is desirable. Two-dimensional ZnSiN <tex-math notation="LaTeX">₂</tex-math> and ZnGeN <tex-math notation="LaTeX">₂</tex-math> possess semiconducting bandgaps of 2.6 and 1.6 eV, respectively. In particular, the isotropic and sharp band edge dispersions induce light electron effective masses. Also, the high phonon-limited mobilities and mean free paths longer than channel length are obtained to ensure the ballistic transport operation. Notably, 2-D ZnSiN <tex-math notation="LaTeX">₂</tex-math> and ZnGeN <tex-math notation="LaTeX">₂</tex-math> FETs with 10-nm gate present the ultrahigh ON-state current of 6730 and 4840 <tex-math notation="LaTeX">μ</tex-math> A/ <tex-math notation="LaTeX">μ</tex-math> m for HP applications. Moreover, ultrascaled 3–10-nm and 12-nm ZnXN <tex-math notation="LaTeX">₂</tex-math> FETs can fulfill the International Technology Roadmap for Semiconductors (ITRSs) and the International Roadmap for Devices and Systems (IRDS) 2028 demands for HP devices in terms of ON-state current, delay time, and power-delay product (PDP). We believe that our findings will shed light on the applications of 2-D ZnXN <tex-math notation="LaTeX">₂</tex-math> in future HP nanoelectronics.