Performance optimization of AlGaAs and Al x Ga 1−x As based SM-TM-DG-JL-TFET for an analog/RF applications

This study aims to enhance the efficiency of the Double Gate-Junctionless-Tunnel Field Effect Transistor (DG-JL-TFET) by optimizing the utilization of AlGaAs and GaAs/Si/AlGaAs-based Single Material and Tri-Material (SM and TM) configurations.In order to overcome the drawbacks of present TFET architectures, such as their limited ability to drive current and their ambipolar behaviour, and to enhance the on-state current, To execute our suggested SM-TM-DG-JL-TFET configuration. The TM structure exhibits a greater on-state current ( I on ) and a lower SubthersholdSwing (SS) in comparison to SM structures. This study quantifies the Unit-gain-current-cut-off-frequency ( f t ) and Maximum oscillation frequency f max by manipulating geometric parameters such as gate length( l g ), gate-oxide thickness, and Channel thickness. The TM structure exhibits a significantly greater on-state current ( I on ) of 14 × 10 −3 A. Compared to SM structures, while simultaneously reducing the off-state current ( I off ), subthreshold swing (SS), and threshold voltage ( V t ). TM structures exhibit higher values of f t and f max in DG-JL-TFET due to their enhanced output conductance compared to SM structures. The device exhibits potential for future low-power-RF applications due to its significant values of f t and f max .